SW8N65DB mosfet equivalent, n-channel mosfet.
TO-251 TO-252 TO-220F TO-262N
* High ruggedness
* Low RDS(ON) (Typ 1.0Ω)@VGS=10V
* Low Gate Charge (Typ 34nC)
* Improved dv/dt Capability
* 100% .
1. Gate 2. Drain 3. Source
This power MOSFET is produced with advanced technology of SAMWIN.
This technology enable the power MOSFET to have better characteristics, including
Fast switching time, low on resistance, low gate charge and especially .
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