* High ruggedness
* RDS(ON) (Max 1.5 Ω)@VGS=10V
* Gate Charge (Typical 57nC)
* Improved dv/dt Capability
* 100% Avalanche Tested SW8N90 N-channel TO-.

This power MOSFET is produced with advanced VDMOS technology of SAMWIN. This technology enable power MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteris.

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