SW4N80B mosfet equivalent, n-channel to-220f mosfet.
* High ruggedness
* RDS(ON) (Max 4Ω)@VGS=10V
* Gate Charge (Typical 14nC)
* Improved dv/dt Capability
* 100% Avalanche Tested
TO-220F
TO-251N
1 2
3.
This power MOSFET is produced with advanced VDMOS technology of SAMWIN. This technology enable power MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteris.
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