SW4N60K mosfet equivalent, n-channel mosfet.
* High ruggedness
* Low RDS(ON) (Typ 1Ω)@VGS=10V
* Low Gate Charge (Typ 13nC)
* Improved dv/dt Capability
* 100% Avalanche Tested
* Application:Ad.
3
This power MOSFET is produced with advanced super junction technology of SAMWIN.
This technology enable the power MOSFET to have better characteristics, including fast
switching time, low on resistance, low gate charge and especially excellent .
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