SW4N65 mosfet equivalent, n-channel mosfet.
* High ruggedness
* RDS(ON) (Max 2.6 Ω)@VGS=10V
* Gate Charge (Typ 18nC)
* Improved dv/dt Capability
* 100% Avalanche Tested
BVDSS : 650V ID : 4.0A
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This power MOSFET is produced with advanced VDMOS technology of SAMWIN. This technology enable power MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteris.
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