SW4N70L mosfet equivalent, n-channel mosfet.
* High ruggedness
* Low RDS(ON) (Typ 0.8Ω)@VGS=10V
* Low Gate Charge (Typ 18nC)
* Improved dv/dt Capability
* 100% Avalanche Tested
* Application:.
1. Gate 2. Drain 3. Source
This power MOSFET is produced with advanced super junction technology of SAMWIN.
This technology enable the power MOSFET to have better characteristics, including fast
switching time, low on resistance, low gate charge .
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