SW069R10VS mosfet equivalent, n-channel mosfet.
N-channel Enhanced mode TO-220FTS MOSFET
* High ruggedness
* Low RDS(ON) (Typ 9.4mΩ)@VGS=4.5V
(Typ 7.8mΩ)@VGS=10V
* Low Gate Charge (Typ 42nC)
* Improve.
This power MOSFET is produced with advanced technology of SAMWIN. This technology enable the power MOSFET to have better characteristics, including fast switching time, low on resistance, low gate charge and especially excellent avalanche characteris.
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