SW036R10E8S mosfet equivalent, n-channel enhanced mode to-220/to-263 mosfet.
TO-220
TO-263
* High ruggedness
* Low RDS(ON) (Typ 3.8mΩ)@VGS=10V
* Low Gate Charge (Typ 85nC)
* Improved dv/dt Capability
* 100% Avalanche Test.
1. Gate 2.Drain 3.Source
This power MOSFET is produced with advanced technology of SAMWIN.
This technology enable the power MOSFET to have better characteristics,
including fast switching time, low on resistance, low gate charge and especially
e.
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