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SW036R10E8S Datasheet, Samwin

SW036R10E8S mosfet equivalent, n-channel enhanced mode to-220/to-263 mosfet.

SW036R10E8S Avg. rating / M : 1.0 rating-12

datasheet Download (Size : 538.81KB)

SW036R10E8S Datasheet
SW036R10E8S
Avg. rating / M : 1.0 rating-12

datasheet Download (Size : 538.81KB)

SW036R10E8S Datasheet

Features and benefits

TO-220 TO-263
* High ruggedness
* Low RDS(ON) (Typ 3.8mΩ)@VGS=10V
* Low Gate Charge (Typ 85nC)
* Improved dv/dt Capability
* 100% Avalanche Test.

Description

1. Gate 2.Drain 3.Source This power MOSFET is produced with advanced technology of SAMWIN. This technology enable the power MOSFET to have better characteristics, including fast switching time, low on resistance, low gate charge and especially e.

Image gallery

SW036R10E8S Page 1 SW036R10E8S Page 2 SW036R10E8S Page 3

TAGS

SW036R10E8S
N-channel
Enhanced
mode
TO-220
TO-263
MOSFET
Samwin

Manufacturer


Samwin

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