Datasheet Summary
Features
N-channel Enhanced mode TO-220/TO-263 MOSFET
- High ruggedness
- Low RDS(ON) (Typ 5.6mΩ)@VGS=10V
- Low Gate Charge (Typ 94nC)
- Improved dv/dt Capability
- 100% Avalanche Tested
- Application:Synchronous Rectification,
Li Battery Protect Board, Inverter
TO-220
TO-263
12 3
12 3
General Description
1. Gate 2.Drain 3.Source
This power MOSFET is produced with advanced technology of SAMWIN. This technology enable the power MOSFET to have better characteristics, including fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics.
BVDSS : 68V
: 110A
RDS(ON) : 5.6mΩ
1 3
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