N-channel Enhanced mode TO-220/TO-263 MOSFET
* High ruggedness
* Low RDS(ON) (Typ 5.6mΩ)@VGS=10V
* Low Gate Charge (Typ 94nC)
* Improved dv/dt Capabilit.

1. Gate 2.Drain 3.Source This power MOSFET is produced with advanced technology of SAMWIN. This technology enable the power MOSFET to have better characteristics, including fast switching time, low on resistance, low gate charge and especially exce.

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