SW038R10ES mosfet equivalent, n-channel mosfet.
TO-247
* High ruggedness
* Low RDS(ON) (Typ 3.6mΩ)@VGS=10V
* Low Gate Charge (Typ 132nC)
* Improved dv/dt Capability
* 100% Avalanche Tested
* A.
This power MOSFET is produced with advanced technology of SAMWIN. This technology enable the power MOSFET to have better characteristics, including fast switching time, low on resistance, low gate charge and especially excellent avalanche characteris.
Image gallery
TAGS
Manufacturer
Related datasheet
Download (Size : 677.47KB)