SW055R06E7T mosfet equivalent, n-channel mosfet.
TO-220
* High ruggedness
* Low RDS(ON) (Typ 5.2mΩ)@VGS=10V
* Low Gate Charge (Typ 94nC)
* Improved dv/dt Capability
* 100% Avalanche Tested
*.
12 3
1. Gate 2.Drain 3.Source
This power MOSFET is produced with advanced technology of SAMWIN.
This technology enable the power MOSFET to have better characteristics,
including fast switching time, low on resistance, low gate charge and especial.
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