SW068R08ET mosfet equivalent, n-channel mosfet.
TO-220
TO-263
* High ruggedness
* Low RDS(ON) (Typ 7.1mΩ)@VGS=10V
* Low Gate Charge (Typ 59nC)
* Improved dv/dt Capability
* 100% Avalanche Tested .
1. Gate 2. Drain 3. Source
This power MOSFET is produced with advanced technology of SAMWIN.
This technology enable the power MOSFET to have better characteristics, including fast
switching time, low on resistance, low gate charge and especially .
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