K4S64163LH-RBL Datasheet, Samsung semiconductor

* 2.5V power supply.
* LVCMOS compatible with multiplexed address.
* Four banks operation.
* MRS cycle with address key programs. -. CAS latency (1, 2 & 3.

ORDERING INFORMATION Part No. K4S64163LH-R(B)E/N/G/C/L/F75 K4S64163LH-R(B)E/N/G/C/L/F1H K4S64163LH-R(B)E/N/G/C/L/F1L M.

The K4S64163LH is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 1,048,576 words by 16 bits, fabricated with SAMSUNG’s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system c.

K4S64163LH-RBC

K4S64163LH-RBE

K4S64163LH-RBF

K4S64163LH-RBG

K4S64163LH-RBN

K4S64163LH-RC

K4S64163LH-RE

K4S64163LH-RF

K4S64163LH-RG

K4S64163LH-RL

K4S64163LH-RN

K4S641632C

K4S641632D