Toshiba
TB62701AN - 16BIT SHIFT REGISTER / LATCH & CONSTANT CURRENT DRIVERS
TOSHIB A Bi-CMOS OSHIBA Constant Cur rent Interf ace Dri ver Curr Interface Driv
TB62701AN
16 Bit Constant Current LED Driver with Shift Register and
(4 views)
Hynix Semiconductor
HY57V641620HG - 4 Banks x 1M x 16Bit Synchronous DRAM
HY57V641620HG
4 Banks x 1M x 16Bit Synchronous DRAM
D E S C R IP T IO N
The Hynix HY57V641620HG is a 67,108,864-bit CMOS Synchronous DRAM, ideally sui
(3 views)
ISSI
IS42SM16160E - 4M x 16Bits x 4Banks Mobile Synchronous DRAM
IS42/45SM/RM/VM16160E
4M x 16Bits x 4Banks Mobile Synchronous DRAM
Description
These IS42/45SM/RM/VM16160E are mobile 268,435,456 bits CMOS Synchronou
(3 views)
ISSI
IS46LR16160G - 4M x 16Bits x 4Banks Mobile DDR SDRAM
IS43/46LR16160G
4M x 16Bits x 4Banks Mobile DDR SDRAM
Description
The IS43/46LR16160G is 268,435,456 bits CMOS Mobile Double Data Rate Synchronous DR
(3 views)
Samsung
K4E661612B - 4M x 16bit CMOS Dynamic RAM
K4E661612B, K4E641612B
CMOS DRAM
4M x 16bit CMOS Dynamic RAM with Extended Data Out
DESCRIPTION
This is a family of 4,194,304 x 16 bit Extended Data
(3 views)
Samsung
K4F151612D - 1M x 16Bit CMOS Dynamic RAM
K4F171611D, K4F151611D K4F171612D, K4F151612D
CMOS DRAM
1M x 16Bit CMOS Dynamic RAM with Fast Page Mode
DESCRIPTION
This is a family of 1,048,576 x
(3 views)
OKI Semiconductor
MR26V25655J - 8M-Word x 32Bit or 64M-Word x 16Bit P2ROM
OKI Semiconductor MR26V25655J
8M–Word × 32–Bit or 16M–Word × 16–Bit Page Mode
FEDR26V25655J-02-05
Issue Date: Jun. 8, 2004
P2ROM
PIN CONFIGURATION (
(3 views)
Hynix Semiconductor
HY57V561620L - 4Banks x 4M x 16Bit Synchronous DRAM
HY57V561620(L)T
4Banks x 4M x 16Bit Synchronous DRAM
DESCRIPTION
The HY57V561620T is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the ma
(3 views)
Hynix Semiconductor
HY27UA161G1M - (HY27SAxxx) 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory
HY27UA(08/16)1G1M Series HY27SA(08/16)1G1M Series 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Document Title 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Mem
(3 views)
Samsung semiconductor
K4M28163LF - 2M x 16Bit x 4 Banks Mobile SDRAM
K4M28163LF - R(B)E/N/S/C/L/R
2M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA FEATURES
• 2.5V power supply. • LVCMOS compatible with multiplexed address. •
(3 views)
Sanyo Semicon Device
LC8390M - 16bits A/D and D/A Converters
(2 views)
Rohm
BR93LC46F-W - 6416bits serial EEPROM
Memory ICs
BR93LC46-W / BR93LC46F-W / BR93LC46RF-W / BR93LC46FJ-W / BR93LC46RFJ-W / BR93LC46FV-W
64×16bits serial EEPROM
BR93LC46-W / BR93LC46F-W /
(2 views)
Rohm
BR93LC46FV-W - 6416bits serial EEPROM
Memory ICs
BR93LC46-W / BR93LC46F-W / BR93LC46RF-W / BR93LC46FJ-W / BR93LC46RFJ-W / BR93LC46FV-W
64×16bits serial EEPROM
BR93LC46-W / BR93LC46F-W /
(2 views)
Asahi Kasei Microsystems
AK4516 - 3V 16BIT ADC/DAC
(2 views)
Samsung semiconductor
KM416C256BL - 256K x 16Bit CMOS Dynamic RAM
(2 views)
ISSI
IS45VM16160E - 4M x 16Bits x 4Banks Mobile Synchronous DRAM
IS42/45SM/RM/VM16160E
4M x 16Bits x 4Banks Mobile Synchronous DRAM
Description
These IS42/45SM/RM/VM16160E are mobile 268,435,456 bits CMOS Synchronou
(2 views)
Samsung semiconductor
KM416C1000C - 1M x 16Bit CMOS Dynamic RAM with Fast Page Mode
KM416C1000C, KM416C1200C KM416V1000C, KM416V1200C
CMOS DRAM
1M x 16Bit CMOS Dynamic RAM with Fast Page Mode
DESCRIPTION
This is a family of 1,048,57
(2 views)
Samsung semiconductor
KM416C1004C - 1M x 16Bit CMOS Dynamic RAM with Extended Data Out
KM416C1004C, KM416C1204C KM416V1004C, KM416V1204C
CMOS DRAM
1M x 16Bit CMOS Dynamic RAM with Extended Data Out
DESCRIPTION
This is a family of 1,048
(2 views)
Samsung semiconductor
KM416C1200C - 1M x 16Bit CMOS Dynamic RAM with Fast Page Mode
KM416C1000C, KM416C1200C KM416V1000C, KM416V1200C
CMOS DRAM
1M x 16Bit CMOS Dynamic RAM with Fast Page Mode
DESCRIPTION
This is a family of 1,048,57
(2 views)
Samsung semiconductor
KM416C254D - 256K x 16Bit CMOS Dynamic RAM with Extended Data Out
KM416C254D, KM416V254D
CMOS DRAM
256K x 16Bit CMOS Dynamic RAM with Extended Data Out
DESCRIPTION
This is a family of 262,144 x 16 bit Extended Data
(2 views)