CXDB5CCAM-MK (CXMT)
LPDDR4X SDRAM
(86 views)
CXDB4ABAM-MK (CXMT)
LPDDR4X SDRAM
(68 views)
EDB8164B4PR (Micron Technology)
LPDDR2 SDRAM
216-Ball and 220-Ball, Dual-Channel LPDDR2 SDRAM Features
LPDDR2 SDRAM
EDB8164B4PR, EDB8164B4PK, EDB8164B4PT, EDBA164B2PR
Features
• Ultra-low-volta
(13 views)
P3P4GF4BLF (Deutron Electronics)
4G Bits Die DDRIII SDRAM
4G B Die DDRIII SDRAM Specification
P3P4GF4BLF
Deutron Electronics Corp.
8F, 68, Sec. 3, NanKing E. RD., Taipei 104, Taiwan, R.O.C. TEL: (886)-2-251
(13 views)
K4B8G1646D (Samsung)
DDP 8Gb D-die DDR3L SDRAM
Rev. 0.9, Jan. 2016 K4B8G1646D
DDP 8Gb D-die DDR3L SDRAM
96FBGA with Lead-Free & Halogen-Free (RoHS compliant)
1.35V
datasheet
SAMSUNG ELECTRONICS
(12 views)
K4S281632B (Samsung semiconductor)
128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL
K4S281632B
CMOS SDRAM
128Mbit SDRAM
2M x 16Bit x 4 Banks Synchronous DRAM LVTTL
Revision 0.0 Aug. 1999
* Samsung Electronics reserves the right to
(12 views)
MT60B2G8 (Micron)
16Gb DDR5 SDRAM
16Gb DDR5 SDRAM Die Rev A Features
16Gb DDR5 SDRAM Addendum
MT60B4G4, MT60B2G8, MT60B1G16 Die Revision A
Features
This document describes the produ
(12 views)
H5ANAG8NCJR (Hynix Semiconductor)
16Gb DDR4 SDRAM
16Gb DDR4 SDRAM
16Gb DDR4 SDRAM
Lead-Free&Halogen-Free (RoHS Compliant)
H5ANAG4NCJR H5ANAG8NCJR H5ANAG6NCJR
* SK hynix reserves the right to change p
(12 views)
K4A4G165WF (Samsung)
4Gb F-die DDR4 SDRAM
Rev. 0.9, Sep. 2018 K4A4G165WF
Preliminary
4Gb F-die DDR4 SDRAM x16 only
96FBGA with Lead-Free & Halogen-Free
(RoHS compliant)
1.2V
datasheet
SA
(12 views)
MT41K512M16 (Micron Technology)
32 Meg x 16 x 8 Banks 1.35V DDR3L-RS SDRAM
8Gb: x16 TwinDie DDR3L-RS SDRAM Description
TwinDie™ 1.35V DDR3L-RS SDRAM
MT41K512M16 – 32 Meg x 16 x 8 Banks Description
The 8Gb (TwinDie™) 1.35V DD
(11 views)
W634GU6NB (Winbond)
32M x 8-BANKS x 16-BIT DDR3L SDRAM
W634GU6NB
32M 8 BANKS 16 BIT DDR3L SDRAM
Table of Contents-
1. GENERAL DESCRIPTION
(11 views)
MT60B1G16 (Micron)
16Gb DDR5 SDRAM
16Gb DDR5 SDRAM Die Rev A Features
16Gb DDR5 SDRAM Addendum
MT60B4G4, MT60B2G8, MT60B1G16 Die Revision A
Features
This document describes the produ
(11 views)
H5ANAG4NCJR (Hynix Semiconductor)
16Gb DDR4 SDRAM
16Gb DDR4 SDRAM
16Gb DDR4 SDRAM
Lead-Free&Halogen-Free (RoHS Compliant)
H5ANAG4NCJR H5ANAG8NCJR H5ANAG6NCJR
* SK hynix reserves the right to change p
(10 views)
V43658R04VXTG-10PC (Mosel Vitelic Corp)
3.3 VOLT 8M x 64 UNBUFFERED SDRAM MODULE
MOSEL VITELIC
V43658R04V 3.3 VOLT 8M x 64 UNBUFFERED SDRAM MODULE
PRELIMINARY
Features
■ 168 Pin Unbuffered 8,388,608 x 64 bit Oganization SDRAM DI
(9 views)
V437432E24V (Mosel Vitelic Corp)
3.3 VOLT 32M x 72 HIGH PERFORMANCE REGISTERED SDRAM ECC MODULE
MOSEL VITELIC
V437432E24V 3.3 VOLT 32M x 72 HIGH PERFORMANCE REGISTERED SDRAM ECC MODULE
PRELIMINARY
Features
s 168 Pin Registered ECC 33,554,432 x
(9 views)
HY57V168010 (Hynix Semiconductor)
(HY57V16x010) 16M SDRAM
www.DataSheet4U.com
www.DataSheet4U.com
www.DataSheet4U.com
www.DataSheet4U.com
www.DataSheet4U.com
www.DataSheet4U.com
www.DataSheet4U.com
www
(9 views)
W9725G8JB (Winbond)
8M X 4 BANKS X 8 BIT DDR2 SDRAM
www.DataSheet.co.kr
W9725G8JB 8M 4 BANKS 8 BIT DDR2 SDRAM
Table of Contents1. 2. 3. 4. 5. 6. 7. 7.1 7.2 GENERAL DESCRIPTION
(9 views)
A2V64S40CTP (Powerchip)
64M Single Data Rate SDRAM
www.DataSheet.co.kr
Datasheet pdf - http://www.DataSheet4U.net/
ULTRA SOURCE TECHNOLOGY CORP. LTD.
㆗ ㆒ 1 50 1 7 TEL : 886-2-822631
(9 views)
K4UCE3Q4AB (Samsung)
64Gb QDP LPDDR4X SDRAM
Rev. 1.0, Apr. 2022
K4UCE3Q4AB
64Gb QDP LPDDR4X SDRAM
200FBGA, 10x15 128Mb x32DQ x8banks x2channels
This document and all information provided herein
(9 views)
K4S281632C-TP75 (Samsung semiconductor)
128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL
K4S281632C-TI(P)
CMOS SDRAM
128Mbit SDRAM
2M x 16Bit x 4 Banks Synchronous DRAM LVTTL
Revision 0.1 June 2001
* Samsung Electronics reserves the ri
(8 views)