K4S64163LH-RBG 54fbga equivalent, 1m x 16bit x 4 banks mobile sdram in 54fbga.
* 2.5V power supply.
* LVCMOS compatible with multiplexed address.
* Four banks operation.
* MRS cycle with address key programs. -. CAS latency (1, 2 & 3.
ORDERING INFORMATION
Part No. K4S64163LH-R(B)E/N/G/C/L/F75 K4S64163LH-R(B)E/N/G/C/L/F1H K4S64163LH-R(B)E/N/G/C/L/F1L M.
The K4S64163LH is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 1,048,576 words by 16 bits, fabricated with SAMSUNG’s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system c.
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