logo

K4H561638D-TCB3 Datasheet, Samsung Semiconductor

K4H561638D-TCB3 sdram equivalent, 256mb d-die ddr sdram.

K4H561638D-TCB3 Avg. rating / M : 1.0 rating-13

datasheet Download (Size : 205.14KB)

K4H561638D-TCB3 Datasheet

Features and benefits


* Double-data-rate architecture; two data transfers per clock cycle
* Bidirectional data strobe(DQS)
* Four banks operation
* Differential clock inputs(CK.

Description

SYMBOL CK, CK DDR SDRAM TYPE Input DESCRIPTION Clock : CK and CK are differential clock inputs. All address and control input signals are sampled on the positive edge of CK and negative edge of CK. Output (read) data is referenced to both edges of.

Image gallery

K4H561638D-TCB3 Page 1 K4H561638D-TCB3 Page 2 K4H561638D-TCB3 Page 3

TAGS

K4H561638D-TCB3
256Mb
D-die
DDR
Sdram
Samsung Semiconductor

Since 2006. D4U Semicon.   |   Contact Us   |   Privacy Policy   |   Purchase of parts