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K4H560438D-TCB3 - 256Mb D-die DDR Sdram

Download the K4H560438D-TCB3 datasheet PDF. This datasheet also covers the K4H560838D-TCB3 variant, as both devices belong to the same 256mb d-die ddr sdram family and are provided as variant models within a single manufacturer datasheet.

General Description

Clock : CK and CK are differential clock inputs.

All address and control input signals are sampled on the positive edge of CK and negative edge of CK.

Output (read) data is referenced to both edges of CK.

Key Features

  • Double-data-rate architecture; two data transfers per clock cycle.
  • Bidirectional data strobe(DQS).
  • Four banks operation.
  • Differential clock inputs(CK and CK).
  • DLL aligns DQ and DQS transition with CK transition.
  • MRS cycle with address key programs -. Read latency 2, 2.5 (clock) www. DataSheet4U. com -. Burst length (2, 4, 8) -. Burst type (sequential & interleave).
  • All inputs except data & DM are sampled at the positive going edge of.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (K4H560838D-TCB3_SamsungSemiconductor.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription for K4H560438D-TCB3 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for K4H560438D-TCB3. For precise diagrams, and layout, please refer to the original PDF.

256Mb Key Features • Double-data-rate architecture; two data transfers per clock cycle • Bidirectional data strobe(DQS) • Four banks operation • Differential clock inputs...

View more extracted text
al data strobe(DQS) • Four banks operation • Differential clock inputs(CK and CK) • DLL aligns DQ and DQS transition with CK transition • MRS cycle with address key programs -. Read latency 2, 2.5 (clock) www.DataSheet4U.com -. Burst length (2, 4, 8) -. Burst type (sequential & interleave) • All inputs except data & DM are sampled at the positive going edge of the system clock(CK) • Data I/O transactions on both edges of data strobe • Edge aligned data output, center aligned data input • LDM,UDM/DM for write masking only • Auto & Self refresh • 7.8us refresh interval(8K/64ms refresh) • Maximum burst refresh cycle : 8 • 66p

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K4H560838H (K4H560438H - K4H561638H) 256Mb H-die DDR SDRAM Specification
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