Datasheet Details
| Part number | K4H560838D-TCB3 |
|---|---|
| Manufacturer | Samsung Semiconductor |
| File Size | 205.14 KB |
| Description | 256Mb D-die DDR Sdram |
| Datasheet |
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Clock : CK and CK are differential clock inputs.
All address and control input signals are sampled on the positive edge of CK and negative edge of CK.
Output (read) data is referenced to both edges of CK.
| Part number | K4H560838D-TCB3 |
|---|---|
| Manufacturer | Samsung Semiconductor |
| File Size | 205.14 KB |
| Description | 256Mb D-die DDR Sdram |
| Datasheet |
|
|
|
|
Note: Below is a high-fidelity text extraction (approx. 800 characters) for K4H560838D-TCB3. For precise diagrams, and layout, please refer to the original PDF.
256Mb Key Features • Double-data-rate architecture; two data transfers per clock cycle • Bidirectional data strobe(DQS) • Four banks operation • Differential clock inputs...
| Part Number | Description |
|---|---|
| K4H560838F-TC | DDR SDRAM 256Mb F-die |
| K4H560838F-TCC4 | 256Mb F-die DDR400 SDRAM Specification |
| K4H560838F-TCCC | 256Mb F-die DDR400 SDRAM Specification |
| K4H560838F-UCC4 | 256Mb F-die DDR400 SDRAM |
| K4H560838F-UCCC | 256Mb F-die DDR400 SDRAM |
| K4H560838H | (K4H560438H - K4H561638H) 256Mb H-die DDR SDRAM Specification |
| K4H560838J | 256Mb J-die DDR SDRAM Specification |
| K4H560438D-TCB3 | 256Mb D-die DDR Sdram |
| K4H560438H | (K4H560438H - K4H561638H) 256Mb H-die DDR SDRAM Specification |
| K4H560438J | 256Mb J-die DDR SDRAM Specification |