logo

K9F8G08B0M Datasheet, Samsung Electronics

K9F8G08B0M memory equivalent, flash memory.

K9F8G08B0M Avg. rating / M : 1.0 rating-11

datasheet Download (Size : 1.37MB)

K9F8G08B0M Datasheet
K9F8G08B0M Avg. rating / M : 1.0 rating-11

datasheet Download (Size : 1.37MB)

K9F8G08B0M Datasheet

Features and benefits


* Voltage Supply - 2.7V Device(K9F8G08B0M) : 2.5V ~ 2.9V - 3.3V Device(K9F8G08U0M) : 2.7V ~ 3.6V
* Organization - Memory Cell Array : (1G + 32M) x 8bit - Data Reg.

Application

where Product failure could result in loss of life or personal or physical harm, or any military or defense application,.

Description

Offered in 1Gx8bit, the K9F8G08X0M is a 8G-bit NAND Flash Memory with spare 256M-bit. The device is offered in 2.7V and 3.3V Vcc. Its NAND cell provides the most cost-effective solution for the solid state application market. A program operation can .

Image gallery

K9F8G08B0M Page 1 K9F8G08B0M Page 2 K9F8G08B0M Page 3

TAGS

K9F8G08B0M
FLASH
MEMORY
Samsung Electronics

Manufacturer


Samsung Electronics

Related datasheet

K9F8G08U0M

K9F8G08UXM

K9F8008W0M-TCB0

K9F8008W0M-TIB0

K9F1208B0B

K9F1208B0C

K9F1208D0A

K9F1208D0B

K9F1208D0B-D

K9F1208D0B-Y

K9F1208Q0A

K9F1208Q0A-XXB0

K9F1208Q0B

Since 2006. D4U Semicon.   |   Contact Us   |   Privacy Policy   |   Purchase of parts