Datasheet Details
| Part number | K9F8G08UXM |
|---|---|
| Manufacturer | Samsung Electronics |
| File Size | 1.37 MB |
| Description | FLASH MEMORY |
| Datasheet |
 K9F8G08UXM Datasheet
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General Description
Offered in 1Gx8bit, the K9F8G08X0M is a 8G-bit NAND Flash Memory with spare 256M-bit.
The device is offered in 2.7V and 3.3V Vcc.
Its NAND cell provides the most cost-effective solution for the solid state application market.
Key Features
- Voltage Supply - 2.7V Device(K9F8G08B0M) : 2.5V ~ 2.9V - 3.3V Device(K9F8G08U0M) : 2.7V ~ 3.6V.
- Organization - Memory Cell Array : (1G + 32M) x 8bit - Data Register : (4K + 128) x 8bit.
- Automatic Program and Erase - Page Program : (4K + 128)Byte - Block Erase : (256K + 8K)Byte.
- Page Read Operation - Page Size : (4K + 128)Byte - Random Read : 25µs(Max. ) - Serial Access : 25ns(Min. ).
- Fast Write Cycle Time - Page Program time : 200µs(Typ. ) - Block Erase.