Datasheet Details
| Part number | K9F2G08U0A |
|---|---|
| Manufacturer | Samsung Electronics |
| File Size | 1.12 MB |
| Description | (K9F2G08UxA) Flash Memory |
| Datasheet |
 K9F2G08U0A Datasheet
|
|
|
General Description
Offered in 256Mx8bit, the K9F2G08X0A is a 2G-bit NAND Flash Memory with spare 64M-bit.
Its NAND cell provides the most costeffective solution for the solid state application market.
Key Features
- Voltage Supply - 1.65V ~ 1.95V - 2.70V ~ 3.60V.
- Organization - Memory Cell Array : (256M + 8M) x 8bit - Data Register : (2K + 64) x 8bit.
- Automatic Program and Erase - Page Program : (2K + 64)Byte - Block Erase : (128K + 4K)Byte.
- Page Read Operation - Page Size : (2K + 64)Byte - Random Read : 25μs(Max. ) - Serial Access : 25ns(Min. ) (.
- K9F2G08R0A: tRC = 45ns(Min)).
- Fast Write Cycle Time - Page Program time : 200μs(Typ. ) - Block Erase Time : 1.5ms(T.
