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K6R4016C1D Datasheet, Samsung

K6R4016C1D sram equivalent, cmos sram.

K6R4016C1D Avg. rating / M : 1.0 rating-12

datasheet Download (Size : 165.60KB)

K6R4016C1D Datasheet

Features and benefits


* Fast Access Time 10ns(Max.)
* Low Power Dissipation Standby (TTL) : 20mA(Max.) (CMOS) : 5mA(Max.) Operating K6R4016C1D-10 : 65mA(Max.)
* Single 5.0V± 10 % P.

Application

The K6R4016C1D is packaged in a 400mil 44-pin plastic SOJ or TSOP(II) forward or 48 T BGA. FUNCTIONAL BLOCK DIAGRAM Cl.

Description

The K6R4016C1D is a 4,194,304-bit high-speed Static Random Access Memory organized as 262,144 words by 16 bits. The K6R4016C1D uses 16 common input and output lines and has an output enable pin which operates faster than address access time at read c.

Image gallery

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TAGS

K6R4016C1D
CMOS
SRAM
Samsung

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