K6R4004C1C-E, K6R4004C1C-C Datasheet - Samsung semiconductor

K6R4004C1C-E 1Mx4 Bit High Speed Static RAM

The K6R4004C1C is a 4,194,304-bit high-speed Static Random Access Memory organized as 1,048,576 words by 4 bits. The K6R4004C1C uses 4 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. The device is fabricated using SAMSUNG′s adv.

K6R4004C1C-C, K6R4004C1C-I, K6R4004C1C-E Document Title 1Mx4 Bit High Speed Static RAM(5V Operating). Operated at Extended and Industrial Temperature Ranges. PRELIMINARY CMOS SRAM Revision History Rev No. Rev. 0.0 Rev. 1.0 History Initial release with Preliminary. 1.1 Removed Low power Version. 1.2 Removed Data Retention Characteristics 1.3 Changed ISB1 to 20mA 2.1 Relax D.C parameters. Item ICC 12ns 15ns 20ns Previous 160mA 155mA 150mA Current 190mA 185mA 180mA Draft Data Feb. 12. 1999 Mar. 2.

K6R4004C1C-E Features

* Fast Access Time 10,12,15,20ns(Max.)

* Low Power Dissipation Standby (TTL) : 60mA(Max.) (CMOS) : 10mA(Max.) Operating K6R4004C1C-10 : 160mA(Max.) K6R4004C1C-12 : 150mA(Max.) K6R4004C1C-15 : 140mA(Max.) K6R4004C1C-20 : 130mA(Max.)

* Single 5.0V ±10% Power Supply

* TT

K6R4004C1C-C_Samsungsemiconductor.pdf