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K6R4004V1D Datasheet, Samsung semiconductor

K6R4004V1D ram equivalent, 1mx4 bit high speed static ram.

K6R4004V1D Avg. rating / M : 1.0 rating-12

datasheet Download (Size : 248.36KB)

K6R4004V1D Datasheet
K6R4004V1D
Avg. rating / M : 1.0 rating-12

datasheet Download (Size : 248.36KB)

K6R4004V1D Datasheet

Features and benefits


* Fast Access Time 8,10ns(Max.)
* Low Power Dissipation Standby (TTL) :20mA(Max.) (CMOS) : 5mA(Max.) Operating K6R4004V1D-08: 80mA(Max.) K6R4004V1D-10: 65mA(Max.).

Application

The K6R4004V1D is packaged in a 400 mil 32-pin plastic SOJ. PIN CONFIGURATION(Top View) A0 A1 A2 A3 A4 CS 1 2 3 4 5 6 .

Description

The K6R4004V1D is a 4,194,304-bit high-speed Static Random Access Memory organized as 1,048,576 words by 4 bits. The K6R4004V1D uses 4 common input and output lines and has an output enable pin which operates faster than address access time at read c.

Image gallery

K6R4004V1D Page 1 K6R4004V1D Page 2 K6R4004V1D Page 3

TAGS

K6R4004V1D
1Mx4
Bit
High
Speed
Static
RAM
Samsung semiconductor

Manufacturer


Samsung semiconductor

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