K6R4016V1C Datasheet | Samsung Semiconductor

FEATURES - Fast Access Time 10,12,15ns(Max.) - Low Power Dissipation Standby (TTL) : 60m A(Max.) (CMOS) : 10m A(Max.) 1.2m A(Max.) L-Ver. only Operating K6R4016V1C-10 : 160m A(Max.) K6R4016V1C-12 : 150m A(Max.) K6R4016V1C-15 : 140m A(Max.) - Single 3.3 ±0.3V Power Supply - TTL patible Inputs and Outputs - Fully Static Operation - No Clock or Refresh required - Three State Outputs - 2V Minimum Data Retention : L-Ver. only - Center Power/Ground Pin Configuration - Data Byte Control : LB : I/O1~ I/O8, UB : I/O9~ I/O16 - Standard Pin Configuration K6R4016V1C-J : 44-SOJ-400 K6R4016V1C-T : 44-TSOP2-400BF K6R4016V1C-F : 48-Fine pitch BGA with 0.75 Ball pitch GENERAL DESCRIPTION The K6R4016V1C is a 4,194,304-bit high-speed Static Random Access Memory organized as 262,144 words by 16 bits. The K6R4016V1C uses 16 mon input and output lines and has an output enable pin which operates faster than address access time at read cycle. Also it allows that lower and upper byte access by data byte control(UB, LB). The device is fabricated using SAMSUNG′s advanced CMOS process and designed for high-speed circuit technology. It is particularly well suited for use in high-density high-speed system applications. The K6R4016V1C is packaged in a 400mil 44-pin plastic SOJ or TSOP(II) forward or 48 Fine pitch BGA. FUNCTIONAL BLOCK DIAGRAM Clk Gen. A0 A1 A2 A3 A4 A5 A6 A7 A8 A9 I/O1 ~I/O8 I/O9 ~I/O16 ORDERING INFORMATION K6R4016V1C-C10/C12/C15 mercial Temp. Industrial Temp. K6R4016V1C-I10/I12/I15 Pre-Char...