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STM105N - N-Channel MOSFET

Features

  • Super high dense cell design for low R DS(ON). Rugged and reliable. Suface Mount Package. S O-8 1.

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Datasheet Details

Part number STM105N
Manufacturer SamHop Microelectronics
File Size 119.55 KB
Description N-Channel MOSFET
Datasheet download datasheet STM105N Datasheet

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Full PDF Text Transcription

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Green Product STM105N Ver 1.0 S a mHop Microelectronics C orp. N-Channel Enhancement Mode Field Effect Transistor PRODUCT SUMMARY V DSS 100V ID 6A R DS(ON) (m Ω) Max 31 @ VGS=10V FEATURES Super high dense cell design for low R DS(ON). Rugged and reliable. Suface Mount Package. S O-8 1 ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM EAS PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous b ae Limit 100 ±20 TA=25°C TA=70°C d Units V V A A A mJ W W °C 6 4.8 30 169 -Pulsed Sigle Pulse Avalanche Energy Maximum Power Dissipation a TA=25°C TA=70°C 2.5 1.
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