STM101N
FEATURES
Super high dense cell design for low R DS(ON). Rugged and reliable. Suface Mount Package.
3A
R DS(ON) (m Ω) Typ
170 @ VGS=10V 260 @ VGS=4.5V
S O-8 1
ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM EAS PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous b a
Limit 100 ±20 TA=25°C TA=70°C 3 2.4 15 2.3 TA=25°C TA=70°C 2.8 1.8 -55 to 150
Units V V A A A m J W W °C
-Pulsed Sigle Pulse Avalanche Energy d Maximum Power Dissipation a
Operating Junction and Storage Temperature Range
THERMAL CHARACTERISTICS R JA Thermal Resistance, Junction-to-Ambient a
°C/W
Details are subject to change without notice.
Oct,08,2010
.samhop..tw
Ver1.0
ELECTRICAL CHARACTERISTICS ( T A=25 °C unless otherwise noted )
Symbol Parameter Conditions
VGS=0V , ID=250u A VDS=80V , VGS=0V
Min 100
Typ
Max
Units V
OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS Zero Gate Voltage Drain Current IDSS...
