STM105N
FEATURES
Super high dense cell design for low R DS(ON). Rugged and reliable. Suface Mount Package.
S O-8 1
ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM EAS PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous b ae
Limit 100 ±20 TA=25°C TA=70°C d
Units V V A A A m J W W °C
6 4.8 30 169
-Pulsed Sigle Pulse Avalanche Energy Maximum Power Dissipation a
TA=25°C TA=70°C
2.5 1.6 -55 to 150
Operating Junction and Storage Temperature Range
THERMAL CHARACTERISTICS R JA Thermal Resistance, Junction-to-Ambient a
°C/W
Details are subject to change without notice.
Jul,30,2013
.samhop..tw
Ver 1.0
ELECTRICAL CHARACTERISTICS ( T A=25 °C unless otherwise noted )
Symbol Parameter Conditions Min Typ Max Units OFF CHARACTERISTICS BVDSS Drain-Source Breakdown Voltage IDSS IGSS Zero Gate Voltage Drain Current Gate-Body Leakage Current
VGS=0V , ID=10m A VDS=80V , VGS=0V
100 1 ±100
V u A n A
VGS= ±20V ,...
