STM102D
Ver 1.0
S a m Hop Microelectronics C orp.
Dual Enhancement Mode Field Effect Transistor (N and P Channel)
PRODUCT SUMMARY (N-Channel)
V DSS
100V
PRODUCT SUMMARY (P-Channel)
V DSS
-100V
2.0A
R DS(ON) (m Ω) Max
216 @ VGS=10V
-1.3A
R DS(ON) (m Ω) Max
547 @ VGS=-10V 614 @ VGS=-4.5V
328 @ VGS=4.5V
D2 D2
5 6 7 8
4 3 2 1
G2 S2 G1 S1
S O-8 1
D1 D1
ABSOLUTE MAXIMUM RATINGS ( T C=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM EAS PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed b d a
TC=25°C TC=70°C
N-Channel P-Channel -100 100 ±20 ±20 -1.3 2.0 1.6 7.2 16 -1.0 -4.7 25 2 1.28 -55 to 150
Units V V A A A m J W W °C
Sigle Pulse Avalanche Energy Maximum Power Dissipation a
TC=25°C TC=70°C
Operating Junction and Storage Temperature Range
THERMAL CHARACTERISTICS R JA Thermal Resistance, Junction-to-Ambient a
°C/W
Details are subject to change without notice.
Nov,30,2011
.samhop..tw
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