STM122N
FEATURES
Super high dense cell design for low R DS(ON). Rugged and reliable. Suface Mount Package.
3.4A
R DS(ON) (m ) Max
100 @ VGS=10V 125 @ VGS=4.5V
D2 D2 D1
5 6 7 8
4 3 2 1
G2 S2 G1 S1
S O-8 1
D1
ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM EAS PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed b d a
Limit 100 ±20 TA=25°C TA=70°C 3.4 2.7 12 42 TA=25°C TA=70°C 2 1.28 -55 to 150
Units V V A A A m J W W °C
Single Pulse Avalanche Energy Maximum Power Dissipation a
Operating Junction and Storage Temperature Range
THERMAL CHARACTERISTICS R JA Thermal Resistance, Junction-to-Ambient a
°C/W
Details are subject to change without notice.
Dec,27,2011
.samhop..tw
Ver 1.0
ELECTRICAL CHARACTERISTICS ( T A=25 °C unless otherwise noted )
Symbol Parameter Conditions
VGS=0V , ID=250u A VDS=80V , VGS=0V
Min 100
Typ
Max
Units V
OFF CHARACTERISTICS BVDSS Drain-Source Breakdown...
