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SPN3632 - N-Channel MOSFET

General Description

The SPN3632 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

Key Features

  • 100V/80A,RDS(ON)=8.8mΩ@VGS=10V.
  • 100V/30A,RDS(ON)=13mΩ@VGS=6.0V.
  • 100V/10A,RDS(ON)=10mΩ@VGS=4.5V.
  • Super high density cell design for extremely low RDS (ON).
  • Exceptional on-resistance and maximum DC current capability.
  • TO-220-3L package design.

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Datasheet Details

Part number SPN3632
Manufacturer SYNC POWER
File Size 393.93 KB
Description N-Channel MOSFET
Datasheet download datasheet SPN3632 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SPN3632 N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN3632 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application , notebook computer power management and other battery powered circuits where high-side switching . FEATURES  100V/80A,RDS(ON)=8.8mΩ@VGS=10V  100V/30A,RDS(ON)=13mΩ@VGS=6.0V  100V/10A,RDS(ON)=10mΩ@VGS=4.