SPN3632 mosfet equivalent, n-channel mosfet.
* 100V/80A,RDS(ON)=8.8mΩ@VGS=10V
* 100V/30A,RDS(ON)=13mΩ@VGS=6.0V
* 100V/10A,RDS(ON)=10mΩ@VGS=4.5V
* Super high density cell design for extremely low
RDS .
* DC/DC Converter
* Load Switch
* SMPS Secondary Side Synchronous Rectifier
PIN CONFIGURATION( TO-220-3L )
.
The SPN3632 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are part.
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