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SPN3006 - N-Channel MOSFET

Description

The SPN3006 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.

Features

  • 30V/80A,RDS(ON)=4.7mΩ@VGS=10V.
  • 30V/80A,RDS(ON)=7.5mΩ@VGS=4.5V.
  • Super high density cell design for extremely low RDS (ON).
  • Exceptional on-resistance and maximum DC current capability.
  • TO-252-2L/TO-251S-3L package design PIN.

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Datasheet Details

Part number SPN3006
Manufacturer SYNC POWER
File Size 446.76 KB
Description N-Channel MOSFET
Datasheet download datasheet SPN3006 Datasheet
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SPN3006 N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN3006 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. The SPN3006 has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed. APPLICATIONS  High Frequency Synchronous Buck Converter  DC/DC Power System  Load Switch FEATURES  30V/80A,RDS(ON)=4.7mΩ@VGS=10V  30V/80A,RDS(ON)=7.5mΩ@VGS=4.
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