Datasheet4U Logo Datasheet4U.com

SPN3055 - N-Channel MOSFET

Description

The SPN3055 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

Features

  • 30V/12A,RDS(ON)=60mΩ@VGS=10V.
  • 30V/6A,RDS(ON)=90mΩ@VGS=4.5V.
  • Super high density cell design for extremely low RDS (ON).
  • Exceptional on-resistance and maximum DC current capability.
  • TO-252-2L package design PIN.

📥 Download Datasheet

Datasheet preview – SPN3055

Datasheet Details

Part number SPN3055
Manufacturer SYNC POWER
File Size 545.55 KB
Description N-Channel MOSFET
Datasheet download datasheet SPN3055 Datasheet
Additional preview pages of the SPN3055 datasheet.

📁 Similar Datasheet

Other Datasheets by SYNC POWER

Full PDF Text Transcription

Click to expand full text
SPN3055 N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN3055 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application, such as DC/DC converter and Desktop computer power management. The package is universally preferred for commercial industrial surface mount applications APPLICATIONS  Power Management in Desktop Computer  DC/DC Converter  LCD Display inverter FEATURES  30V/12A,RDS(ON)=60mΩ@VGS=10V  30V/6A,RDS(ON)=90mΩ@VGS=4.
Published: |