SPN30T25 - N-Channel MOSFET

Description

The SPN30T25 is the N-Channel enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.

Features

250V/29A,RDS(ON)=64mΩ@VGS=10V.
Super high density cell design for extremely low RDS (ON).
Exceptional on-resistance and maximum DC current capability.
TO-220-3L/TO-252-2L/PPAK5x6-8L package design PIN.

SYNC POWER

📥 Download Datasheet

Datasheet Details

Part number	SPN30T25
Manufacturer	SYNC POWER
File Size	472.55 KB
Description	N-Channel MOSFET
Datasheet	SPN30T25 Datasheet
Additional preview pages of the SPN30T25 datasheet.

📁 Similar Datasheet

SPN30 - Universal Input Fully Enclosed Switching Power Supply (Volgen Kaga Electronics)
SPN3030100MPTA - Coating Inductors (DARFON)
SPN3030100MPTE - Coating Inductors (DARFON)
SPN3030150MPTA - Coating Inductors (DARFON)
SPN3030150MPTE - Coating Inductors (DARFON)
SPN30301R0NPTA - Coating Inductors (DARFON)
SPN30301R0NPTE - Coating Inductors (DARFON)
SPN30301R5NPTA - Coating Inductors (DARFON)
SPN30301R5NPTE - Coating Inductors (DARFON)
SPN3030220MPTA - Coating Inductors (DARFON)

Other Datasheets by SYNC POWER

SPN30T10 - N-Channel MOSFET
SPN3004 - N-Channel MOSFET
SPN3006 - N-Channel MOSFET
SPN3009 - N-Channel MOSFET
SPN3055 - N-Channel MOSFET
SPN3400 - N-Channel MOSFET
SPN3400W - N-Channel MOSFET
SPN3402 - N-Channel MOSFET

Full PDF Text Transcription

Click to expand full text

SPN30T25 N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN30T25 is the N-Channel enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. The SPN30T25 has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed.

Published: Sep 28, 2023 |