SPN166T06 mosfet equivalent, n-channel mosfet.
* 60V/166A,RDS(ON)=3.0mΩ@VGS=10V
RDS(ON)=4.5mΩ@VGS=4.5V
* Super high density cell design for
extremely low RDS(ON)
* Exceptional on-resistance and maximum
DC .
* DC/DC Converter
* Load Switch
* SMPS Secondary Side Synchronous Rectifier
* Motor Control
* Power .
The SPN166T06 is the N-Channel logic enhancement mode power field effect transistor which is produced using super high cell density DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These device.
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