SPN166N06 mosfet equivalent, n-channel mosfet.
* 60V/166A,RDS(ON)=3.1mΩ@VGS=10V
* Super high density cell design for extremely low
RDS(ON)
* Exceptional on-resistance and maximum DC current
capability
.
* DC/DC Converter
* Load Switch
* SMPS Secondary Side Synchronous Rectifier
* Motor Control
* Power .
The SPN166N06 is the N-Channel enhancement mode power field effect transistor which is produced using super high cell density DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are .
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