SPN166N06 datasheet, mosfet equivalent, SYNC POWER

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Features and benefits

* 60V/166A,RDS(ON)=3.1mΩ@VGS=10V
* Super high density cell design for extremely low RDS(ON)
* Exceptional on-resistance and maximum DC current capability
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Application

* DC/DC Converter
* Load Switch
* SMPS Secondary Side Synchronous Rectifier
* Motor Control
* Power .

Description

The SPN166N06 is the N-Channel enhancement mode power field effect transistor which is produced using super high cell density DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are .

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