* N-Channel 30V/1.4A,RDS(ON)=190mΩ@VGS=10V 30V/1.0A,RDS(ON)=200mΩ@VGS=4.5V 30V/0.5A,RDS(ON)=250mΩ@VGS=2.5V
* Super high density cell design for extremely low RDS(.

such as notebook computer power management and other battery powered circuits where high-side switching, low in-line pow.

The SPN1308W is the N-Channel enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior switchin.

SPN1304

SPN1306

SPN1380

SPN138N08

SPN100T12

SPN1012

SPN1014

SPN1022

SPN1024

SPN1026

SPN1028

SPN1032

SPN1072

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