SPN1380 mosfet equivalent, n-channel mosfet.
* 50V/0.50A , RDS(ON)=1.6Ω@VGS=10V
* 50V/0.20A , RDS(ON)=2.5Ω@VGS=4.5V
* 50V/0.10A , RDS(ON)=4.5Ω@VGS=2.5V
* Super high density cell design for extremely .
requiring up to 300mA DC and can deliver pulsed currents up to 800mA. These products are particularly suited for low vol.
The SPN1380 is the N-Channel enhancement mode field effect transistors are produced using high cell density DMOS technology. These products have been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performa.
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