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SPN1304 - N-Channel MOSFET

Description

The SPN1304 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

Features

  • 20V/2.0A,RDS(ON)=225mΩ@VGS=4.5V.
  • 20V/1.5A,RDS(ON)=315mΩ@VGS=2.5V.
  • 20V/1.0A,RDS(ON)=425mΩ@VGS=1.8V.
  • Super high density cell design for extremely low RDS (ON).
  • Exceptional on-resistance and maximum DC current capability.
  • SOT-323 ( SC.
  • 70 ) package design PIN.

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Datasheet Details

Part number SPN1304
Manufacturer SYNC POWER
File Size 182.95 KB
Description N-Channel MOSFET
Datasheet download datasheet SPN1304 Datasheet
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SPN1304 N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN1304 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits where high-side switching , and low in-line power loss are needed in a very small outline surface mount package. APPLICATIONS  Power Management in Note book  Portable Equipment  Battery Powered System  DC/DC Converter  Load Switch  DSC  LCD Display inverter FEATURES  20V/2.0A,RDS(ON)=225mΩ@VGS=4.5V  20V/1.5A,RDS(ON)=315mΩ@VGS=2.5V  20V/1.
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