* N-Channel 30V/0.95A,RDS(ON)=550mΩ@VGS=4.5V 30V/0.75A,RDS(ON)=650mΩ@VGS=2.5V 30V/0.65A,RDS(ON)=850mΩ@VGS=1.8V
* Super high density cell design for extremely low .

such as notebook computer power management and other battery powered circuits where high-side switching , low in-line po.

The SPN1306 is the N-Channel enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior switchin.

SPN1304

SPN1308W

SPN1380

SPN138N08

SPN100T12

SPN1012

SPN1014

SPN1022

SPN1024

SPN1026

SPN1028

SPN1032

SPN1072

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