Order code STW65N65DM2AG VDS 650 V RDS(on) max. 0.05 Ω ID PTOT 60 A 446 W
* Designed for automotive applications and AEC-Q101 qualified
* Fast-recovery body d.

and AEC-Q101 qualified
* Fast-recovery body diode
* Extremely low gate charge and input capacitance
* Low on.

This high voltage N-channel Power MOSFET is part of the MDmesh™ DM2 fast recovery diode series. It offers very low recovery charge (Qrr) and time (trr) combined with low RDS(on), rendering it suitable for the most demanding high efficiency converters.

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