STW65N023M9-4 datasheet, mosfet equivalent, STMicroelectronics

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Features and benefits

Order code VDS RDS(on) max. ID STW65N023M9-4 650 V 23.0 mΩ 92
* Worldwide best FOM RDS(on)*Qg among silicon-based devices
* Higher VDSS rating
* High.

Application

* High efficiency switching applications Power source(2) ND1TPS2DS3G4 Description This N-channel Power MOSFET is b.

Description

This N-channel Power MOSFET is based on the most innovative super-junction MDmesh M9 technology, suitable for medium/high voltage MOSFETs featuring very low RDS(on) per area. The silicon based M9 technology benefits from a multi-drain manufacturing p.

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