STW65N045M9-4 mosfet equivalent, n-channel power mosfet.
Gate(4) Driver
source(3)
2 34 1 TO247-4 Drain(1, TAB)
Power source(2)
ND1TPS2DS3G4
Order code
VDS
RDS(on) max.
ID
STW65N045M9-4
650 V
45 mΩ
54 A
*
Worldwi.
* High efficiency switching applications
Description
This N-channel Power MOSFET is based on the most innovative .
This N-channel Power MOSFET is based on the most innovative super-junction MDmesh M9 technology, suitable for medium/high voltage MOSFETs featuring very low RDS(on) per area. The silicon based M9 technology benefits from a multi-drain manufacturing .
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