Order code VDS RDS(on) max. ID PTOT STW65N80K5 800 V 0.08 Ω 46 A 446 W
* Industry’s lowest RDS(on) x area
* Industry’s best figure of merit (FoM)
* Ult.

* Switching applications Description This very high voltage N-channel Power MOSFET is designed using MDmesh™ K5 tech.

This very high voltage N-channel Power MOSFET is designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring supe.

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