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STW65N023M9-4 - N-channel Power MOSFET

General Description

This N-channel Power MOSFET is based on the most innovative super-junction MDmesh M9 technology, suitable for medium/high voltage MOSFETs featuring very low RDS(on) per area.

The silicon based M9 technology benefits from a multi-drain manufacturing process which allows an enhanced device structure.

Key Features

  • Order code VDS RDS(on) max. ID STW65N023M9-4 650 V 23.0 mΩ 92.
  • Worldwide best FOM RDS(on).
  • Qg among silicon-based devices.
  • Higher VDSS rating.
  • Higher dv/dt capability.
  • Excellent switching performance thanks to the extra driving source pin.
  • Easy to drive.
  • 100% avalanche tested Gate(4) Driver source(3).

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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STW65N023M9-4 Datasheet N-channel 650 V, 19.9 mΩ typ., 92 A MDmesh M9 Power MOSFET in a TO247-4 package 2 34 1 TO247-4 Drain(1, TAB) Features Order code VDS RDS(on) max. ID STW65N023M9-4 650 V 23.0 mΩ 92 • Worldwide best FOM RDS(on)*Qg among silicon-based devices • Higher VDSS rating • Higher dv/dt capability • Excellent switching performance thanks to the extra driving source pin • Easy to drive • 100% avalanche tested Gate(4) Driver source(3) Applications • High efficiency switching applications Power source(2) ND1TPS2DS3G4 Description This N-channel Power MOSFET is based on the most innovative super-junction MDmesh M9 technology, suitable for medium/high voltage MOSFETs featuring very low RDS(on) per area.