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STW26NM60N - N-channel Power MOSFET

Description

These devices are N-channel Power MOSFETs developed using the second generation of MDmesh™ technology.

Features

  • Type STB26NM60N STF26NM60N STI26NM60N STP26NM60N STW26NM60N.
  • TAB TAB VDSS 600 V 600 V 600 V 600 V 600 V RDS(on) max < 0.165 Ω < 0.165 Ω < 0.165 Ω < 0.165 Ω < 0.165 Ω ID 3 20 A 20 A 20 A 20 A 20 A TAB 1 2 3 12 3 1 2 TO-220FP I²PAK TO-220 100% avalanche tested Low input capacitance and gate charge Low gate input resistance Figure 1. 3 1 2 1 3 D²PAK TO-247.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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STB26NM60N, STF26NM60, STI26NM60N, STP26NM60N, STW26NM60N N-channel 600 V, 0.135 Ω , 20 A MDmesh™ II Power MOSFET 2 2 in D PAK, I PAK, TO-220, TO-220FP and TO-247 packages Datasheet — production data Features Type STB26NM60N STF26NM60N STI26NM60N STP26NM60N STW26NM60N ■ ■ ■ TAB TAB VDSS 600 V 600 V 600 V 600 V 600 V RDS(on) max < 0.165 Ω < 0.165 Ω < 0.165 Ω < 0.165 Ω < 0.165 Ω ID 3 20 A 20 A 20 A 20 A 20 A TAB 1 2 3 12 3 1 2 TO-220FP I²PAK TO-220 100% avalanche tested Low input capacitance and gate charge Low gate input resistance Figure 1. 3 1 2 1 3 D²PAK TO-247 Application ■ Internal schematic diagram Switching applications $4!"  Description These devices are N-channel Power MOSFETs developed using the second generation of MDmesh™ technology.
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