STPSC8TH13TI diode equivalent, dual 650v power schottky silicon carbide diode.
* No or negligible reverse recovery
* Switching behavior independent of
temperature
* Suited for specific bridge-less topologies
* High forward surge capa.
The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no.
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