STPSC806 diode equivalent, schottky barrier 600 v power schottky silicon carbide diode.
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No or negligible reverse recovery Switching behavior independent of temperature Particularly suitable in PFC boost diode function
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Description
The .
NOR IN PRODUCTS OR SYSTEMS WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY, DEATH, OR SEVERE PROPERTY OR ENV.
The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide bandgap material allows the design of a Schottky diode structure with a 600 V rating. Due to the Schottky construction no r.
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