STPSC806 Overview
The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide bandgap material allows the design of a Schottky diode structure with a 600 V rating.
| Part number | STPSC806 |
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| Datasheet | STPSC806_STMicroelectronics.pdf |
| File Size | 110.59 KB |
| Manufacturer | STMicroelectronics |
| Description | Schottky Barrier 600 V power Schottky silicon carbide diode |
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The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide bandgap material allows the design of a Schottky diode structure with a 600 V rating.
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
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STPSC806D | 600 V power Schottky silicon carbide diode | STMicroelectronics |
See all STMicroelectronics datasheets
| Part Number | Description |
|---|---|
| STPSC1006 | Schottky silicon carbide diode |
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| STPSC606 | Schottky Barrier 600 V power Schottky silicon carbide diode |
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