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STPSC806 Datasheet

Schottky Barrier 600 V power Schottky silicon carbide diode

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STPSC806
600 V power Schottky silicon carbide diode
Features
No or negligible reverse recovery
Switching behavior independent of
temperature
Particularly suitable in PFC boost diode
function
Description
The SiC diode is an ultrahigh performance power
Schottky diode. It is manufactured using a silicon
carbide substrate. The wide bandgap material
allows the design of a Schottky diode structure
with a 600 V rating. Due to the Schottky
construction no recovery is shown at turn-off and
ringing patterns are negligible. The minimal
capacitive turn-off behavior is independent of
temperature.
ST SiC diodes will boost the performance of PFC
operations in hard switching conditions.
A
K
TO-220AC
STPSC806D
Table 1. Device summary
IF(AV)
VRRM
Tj (max)
QC (typ)
8A
600 V
175 °C
10 nC
September 2009
Doc ID 16286 Rev 1
1/7
www.st.com
7


STMicroelectronics Electronic Components Datasheet

STPSC806 Datasheet

Schottky Barrier 600 V power Schottky silicon carbide diode

No Preview Available !

Characteristics
1 Characteristics
www.DaStaTSPheSeCt48U0.c6om
Table 2. Absolute ratings (limiting values at 25 °C unless otherwise specified)
Symbol
Parameter
Value Unit
VRRM
IF(RMS)
IF(AV)
IFSM
IFRM
Tstg
Tj
Repetitive peak reverse voltage
Forward rms current
Average forward current
Tc = 115 °C, δ = 0.5
Surge non repetitive forward
current
tp = 10 ms sinusoidal, Tc = 25 °C
tp = 10 ms sinusoidal, Tc = 125 °C
tp = 10 µs square, Tc = 25 °C
Repetitive peak forward current TC = 115 °C, Tj = 150 °C, δ = 0.1,
Storage temperature range
Operating junction temperature
600
18
8
30
24
120
30
-55 to +175
-40 to +175
V
A
A
A
A
°C
°C
Table 3. Thermal resistance
Symbol
Parameter
Maximum value
Unit
Rth(j-c) Junction to case
2.4 °C/W
Table 4. Static electrical characteristics
Symbol
Parameter
Tests conditions
Min. Typ. Max.
IR (1)
Reverse leakage
current
Tj = 25 °C
VR = VRRM
Tj = 150 °C
-
-
VF (2) Forward voltage drop
Tj = 25 °C IF = 8 A
Tj = 150 °C
-
-
1. tp = 10 ms, δ < 2%
2. tp = 500 µs, δ < 2%
To evaluate the conduction losses use the following equation:
P = 1.2 x IF(AV) + 0.113 x IF2(RMS)
20 100
150 1000
1.4 1.7
1.6 2.1
Unit
µA
V
Table 5.
Symbol
Other parameters
Parameter
Qc Total capacitive charge
C Total capacitance
Test conditions
Vr = 400 V, IF = 8 A dIF/dt = -200 A/µs
Tj = 150 °C
Vr = 0 V, Tc = 25 °C, F = 1 Mhz
Vr = 400 V, Tc = 25 °C, F = 1 Mhz
Typ.
10
450
35
Unit
nC
pF
2/7 Doc ID 16286 Rev 1


Part Number STPSC806
Description Schottky Barrier 600 V power Schottky silicon carbide diode
Maker ST Microelectronics
Total Page 7 Pages
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