STPSC806 Description
The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide bandgap material allows the design of a Schottky diode structure with a 600 V rating.
STPSC806 Datasheet
| Part number | STPSC806 |
|---|---|
| Download | STPSC806 Datasheet (PDF) |
| File Size | 110.59 KB |
| Manufacturer | STMicroelectronics |
| Description | Schottky Barrier 600 V power Schottky silicon carbide diode |
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