* AEC-Q101 qualified
* PPAP capable
* No or negligible reverse recovery
* High forward surge capability
* Operating Tj from -40 °C to 175 °C
* Cre.

* Bootstrap function of SiC MOS-FETS
* Snubber diode
* Switching diode Description The SiC diode is an ultra.

The SiC diode is an ultra-high performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 1200 V rating. Due to the Schottky construction, .

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